Overlay accuracy is measured over the whole field and over the whole wafer.
The NXE:3400C can achieve a dedicated chuck overlay of 1.4 nm and a matched-machine overlay of 1.5 nm. In-situ measurement and corrections per wafer of the optics and stages enable maximum imaging, overlay and CDU performance for each wafer exposed when imaging at low k1.
The system is equipped with projection optics with a numerical aperture (NA) of 0.33 and an illuminator with an operating range sigma of 0.06–1 to maintain high productivity while enabling low k1 and a resolution of 13 nm. The NXE:3400C features an all-reflective 4x reduction lens assembly from Zeiss with a maximum exposure field of 26 x 33 mm. Throughput is larger than or equal to 135 wafers per hour at a dose of 30 mJ/cm 2. The 300 mm wafer throughput specification for the NXE:3400C is larger than or equal to 170 wafers per hour at a dose of 20 mJ/cm 2.
0 kommentar(er)
